Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE

The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for design and verification of power-electronic circuits. This paper shows that GaN-HEMTs can be modeled by selected equations from MOSFET LEVEL 3 model SPICE. A method is proposed extraction SPICE parameters these equations. parameter-extraction are verified with measured static dynamic characteristics commercial GaN-HEMTs. Furthermore, double pulse test performed LTSpice compared to its manufacturer demonstrate effectiveness model. advantage approach use comparison alternative behavioral-based provided some manufacturers, users apply adjust case manufacturers who do not provide models their HEMTs.